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PH-M-007

SiN 웨이퍼

Photonic소재광집적회로 소재
PRODUCT

Technical Description

For low-loss photonic integrated circuit waveguides

Specifications

SiN/SiO2/Si, SiN thickness 100–1000 nm, SiN surface roughness <1 nm rms, substrate size 6–8 inch

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